posted on 2024-04-25, 15:49authored byLogan Samuel Riney
III-V semiconductors have been widely studied since the 1960’s and their physical properties, as well as, their synthesis is fairly well understood. These systems can also host more modern topological characteristics and can be used to study non-s-wave superconductivity. This makes this class of materials a highly attractive platform for studying different types of physics through either doping these semiconductors directly or through interfacing with other materials. This thesis makes use of both of these methods to study the effects of magnetic doping and to study the impact on an interfaced superconductor. To investigate the impact of magnetic doping, we show experiments on Mn doped
InAs/GaSb and use Shubnikov de Hass oscillations to extract the magnetic exchange constant. We find that the introduction of Mn into the InAs/GaSb allow for the tuning of the fermi level and alters the band alignment of the bilayer system. Interestingly, we also discover an interface dependence for the existence of anomalous oscillations that correlate with the coexistence of a 2 Degree Electron Gas and a 2 Degree Hole Gas. In order to explore the effects from interfacing with a superconductor, we show measurements done on Sn1-xInxTe grown on III-V semiconductors. In these measurements, we show how the superconducting critical temperature of Sn1-xInxTe can betuned though interfacing with tertiary III-V semiconductors. We also show a sample that breaks the Pauli limit for the upper critical magnetic field, which could indicate a superconducting pairing symmetry beyond typical s-wave pairing. This thesis shows how material properties can be changed through the consideration of interfaces. The techniques that are involved in studying interfaces can vary based on the type of physics that manifests as a result. The techniques used and developed within this thesis can be used as a basis for further interface focused projects using III-V semiconductors as a platform of study.