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Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy

journal contribution
posted on 2018-08-23, 00:00 authored by A. Yu. Romanova, A A Toropov, A.M. Mintairov, A.S. Vlasov, A.V. Shelaev, D.V. Lebedev, I.V. Mukhin, J. Merz, K.G. Belyaev, M. Yakimov, M.V. Rakhlin, N.A. Kalyuzhnyy, P. Brunkov, P.A. Buryak, S. Oktyabrsky, S. Rouvimov, S.A. Mintairov, V.A. Bykov
We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm–2. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.

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2018-12-18

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  • English

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