Topological Insulator Bi2Se3 Films on Silicon Substrates PAUL

We have employed atomic layer deposition to produce uniform films of Bi 2Se 3, which is a 3D topological insulator (TI), over 5 cm × 5 cm SiO 2-coated Si substrates. The crystalline properties of the films were characterized via Raman spectroscopy, x-ray diffraction, cross-sectional transmission microscopy, and atomic force microscopy, which confirmed the high quality of the films. The TI properties were examined using Hall bridge structures and recording magnetoresistance at 1.9 K. A weak anti-localization effect was observed at low field, from which a phase coherent length of 242 nm and prefactor α value of 1 were determined, indicating desirable topological properties. This approach for film growth provides a path for integrating a 3D topological insulator with silicon integrated circuit technology.