Monolithically-pumped erbium-doped waveguide amplifiers and lasers

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posted on 2016-06-07, 00:00 authored by Douglas C. Hall, Mingjun Huang

Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.

History

Patent Number

US 7655489 B2

Other Application

12/123,257

USPTO Link

http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/7655489

Inventor

Douglas C. Hall Mingjun Huang

Inventor from Local Institution

Douglas C. Hall

Assignee

University of Notre Dame Du Lac

Date Modified

2017-08-01

Language

English

Claims

26

Prior Publication Number

US 20080285610 A1

Publisher

United States Patent and Trademark Office

Cooperative Patent Classification Codes

C03C 13/048 (20130101); C03C 17/23 (20130101); C03C 25/6286 (20130101); H01L 21/02178 (20130101); H01L 21/02233 (20130101); H01L 21/02255 (20130101); H01L 21/02321 (20130101); H01L 21/02351 (20130101); H01L 21/31155 (20130101); H01L 21/31666 (20130101); H01S 3/0632 (20130101); H01S 3/0941 (20130101); H01S 3/17 (20130101); C03C 2217/228 (20130101); C03C 2217/242 (20130101); C03C 2218/32 (20130101); H01S 3/1608 (20130101); H01S 3/175 (20130101); H01S 5/026 (20130101); H01S 5/18308 (20130101); H01S 5/18358 (20130101); H01S 5/2004 (20130101); H01S 5/40 (20130101); H01S 2301/02 (20130101)

Contributor

Douglas C. Hall

International Patent Classification Codes

H01L 21/00 (20060101); H01L 21/3115 (20060101); H01L 21/316 (20060101)

US Patent Classification Codes

438/31; 257/E21.248; 257/E21.286;

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CC BY 4.0

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