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Monolithically-pumped erbium-doped waveguide amplifiers and lasers

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posted on 2016-06-07, 00:00 authored by Douglas C. Hall, Mingjun Huang
Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.

History

Publisher

United States Patent and Trademark Office

Date Modified

2017-08-01

Contributor

Douglas C. Hall

Language

  • English

Patent Number

US 7655489 B2

Other Application

12/123,257

Inventor

Douglas C. Hall Mingjun Huang

Inventor from Local Institution

Douglas C. Hall

Assignee

University of Notre Dame Du Lac

Claims

26

Prior Publication Number

US 20080285610 A1

Cooperative Patent Classification Codes

C03C 13/048 (20130101); C03C 17/23 (20130101); C03C 25/6286 (20130101); H01L 21/02178 (20130101); H01L 21/02233 (20130101); H01L 21/02255 (20130101); H01L 21/02321 (20130101); H01L 21/02351 (20130101); H01L 21/31155 (20130101); H01L 21/31666 (20130101); H01S 3/0632 (20130101); H01S 3/0941 (20130101); H01S 3/17 (20130101); C03C 2217/228 (20130101); C03C 2217/242 (20130101); C03C 2218/32 (20130101); H01S 3/1608 (20130101); H01S 3/175 (20130101); H01S 5/026 (20130101); H01S 5/18308 (20130101); H01S 5/18358 (20130101); H01S 5/2004 (20130101); H01S 5/40 (20130101); H01S 2301/02 (20130101)

International Patent Classification Codes

H01L 21/00 (20060101); H01L 21/3115 (20060101); H01L 21/316 (20060101)

US Patent Classification Codes

438/31; 257/E21.248; 257/E21.286;

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