Nanostructures as Dopant Sources: Maskless Nanoscale Patterning of Silicon Using Shape and Size Controlled Nanomaterials

As miniaturization of electronic components continues, creative solutions for common manufacturing problems are required to continue the trend of “Moore’s Law.” Mask alignment for dopant patterning is one major set-back as nanoscale development continues. My thesis research investigates the use of DNA origami, a designable, self-assembled nanostructure, as a chemical and dopant source for patterning silicon substrates. My work explores the stability of DNA origami when exposed to extreme thermal and solvent environments and identifies the limitations of using these biomolecules in multistep nanofabrication processes, particularly the effect on DNA origami functionalizability. Utilizing this new understanding of DNA origami, I developed a process called “burn-in” to complete maskless patterning of embedded silicon carbide (SiC) “replicas” on silicon substrates. My work details the chemical and electrical characterization of the SiC patterns using a myriad of techniques. I focus primarily on scanning probe microscopy and x-ray photoelectron microscopy. Secondary ion mass spectrometry is used to detect and measure depth profiles of phosphorus from the DNA origami after burn-in and illustrates the doping capacity of the burn-in process. Finally, I illustrate the broad application of the burn-in process by using other shape, size, and chemically controlled nanomaterials for maskless patterning of dopants. It is my hope that this work will expand the use of DNA origami and other traditionally “fragile” materials in unique processing environments and prompt the exploration of novel nanomaterials as creative solutions for nanoelectronic development applications.