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Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications

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posted on 2009-12-11, 00:00 authored by Wangqing Yuan
The ability of Variable Angle Spectroscopic Ellipsometry (VASE) to determine the thickness of the thin In0.49Al0.51P (InAlP) native gate oxide ('InAlP-ox') for GaAs-based MOSFET devices has been demonstrated. The optical constants of InAlP-ox, In0.49Ga0.51P (InGaP), and InAlP have been determined by VASE measurements using a photon energy range of 1.45 to 5.45 eV at room temperature. The optical constants of InAlP and InAlP-ox are used to characterize a thick partially-oxidized InAlP epitaxial film grown on GaAs structure. The excellent agreement between the thickness values determined by Transmission Electron Microscope (TEM) imaging and by VASE supports the validity of our optical constants results. Models have also been developed to accurately fit the thickness of less than 100 ÌÄ'_ InAlP-ox gate oxides grown directly upon a multi-layer MOSFET heterostructure. The deviation of InAlP-ox thickness results determined by VASE from those determined by TEM is within 4%.

History

Date Modified

2017-06-05

Research Director(s)

Douglas Hall

Committee Members

Douglas Hall

Degree

  • Master of Science in Electrical Engineering

Degree Level

  • Master's Thesis

Language

  • English

Alternate Identifier

etd-12112009-171531

Publisher

University of Notre Dame

Additional Groups

  • Electrical Engineering

Program Name

  • Electrical Engineering

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