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  Article

  Realization of GaN PolarMOS using Selective-Area Regrowth by MBE and it's Breakdown Mechanisms
  

  Author(s):

  Kazuki Nomoto, Aditya Sundar, Kevin Lee, Mingda Zhu, Zongyang Hu, Edward Beam, Jinqiao Xie, Manyam Pilla, Xiang Gao, Sergei Rouvimov, Debdeep Jena, Huili Grace Xing

  Abstract:

  GaN PolarMOS is a vertical power transistor incorporating the unique polarization-induced bulk doping scheme in III-nitrides for the body p-n junction. We report the realization of this device, wherein the vertical channel, source contact, and body contact regions are successfully formed using three steps of selective-area epitaxial regrowth, all by molecular beam epitaxy (MBE). The fabricated PolarMOS has an excellent on-current of >500 mA mm−1 and a specific on-resistance of 0.66 mΩ · cm…

  Date Published:

  2019-05

  Record Visibility:

  Public