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  • Author(s):
    Christopher Smyth, Lee Walsh, Pavel Bolshakov, Massimo Catalano, Michael Schmidt, Brendan Sheehan, Rafik Addou, Luhua Wang, Jiyoung Kim, Moon Kim, Christopher Hinkle, Robert Wallace
    Abstract:

    Sc has been employed as an electron contact to a number of two-dimensional (2D) materials (e.g. MoS2, black phosphorous) and has enabled, at times, the lowest electron contact resistance. However, the extremely reactive nature of Sc leads to stringent processing requirements and metastable device performance with no true understanding of how to achieve consistent, high-performance Sc contacts. In this work, WSe2 transistors with impressive subthreshold slope (109 mV dec−1) and I ON/I OFF (106…

    Date Published:
    2019-07
  • Author(s):
    Christopher Smyth, Lee Walsh, Pavel Bolshakov, Massimo Catalano, Michael Schmidt, Brendan Sheehan, Rafik Addou, Luhua Wang, Jiyoung Kim, Moon Kim, Christopher Hinkle, Robert Wallace
    Abstract:

    Sc has been employed as an electron contact to a number of two-dimensional (2D) materials (e.g. MoS2, black phosphorous) and has enabled, at times, the lowest electron contact resistance. However, the extremely reactive nature of Sc leads to stringent processing requirements and metastable device performance with no true understanding of how to achieve consistent, high-performance Sc contacts. In this work, WSe2 transistors with impressive subthreshold slope (109 mV dec−1) and I ON/I OFF (106…

    Date Published:
    2019-07
  • Author(s):
    Paolo Paletti, Ruoyu Yue, Christopher Hinkle, Susan Fullerton-Shirey, Alan Seabaugh
    Abstract:

    Two-dimensional van der Waals materials offer unique advantages for the development of band-to-band tunneling devices given their lack of dangling bonds, atomically flat thickness and steep band edges. Here, we present the experimental demonstration of an electric double layer (EDL) Esaki junction in synthetic WSe2 thin films. A Si-compatible process is developed for the fabrication of nanoscale FETs utilizing molecular beam epitaxy of WSe2 performed directly on top of a high-κ dielectric at ba…

    Date Published:
    2019-04