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  • Author(s):
    E. I. Moiseev, F. I. Zubov, A. M. Mozharov, M. V. Maximov, N. A. Kalyuzhnyy, S. A. Mitairov, M. M. Kulagina, S. A. Blokhin, K. E. Kudyavtsev, A. N. Yablonskiy, S. V. Morozov, Y. Bernikov, S. Rouvimov, A. E. Khukov, N. V. Kryzhanovskaya
    Abstract:

    GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation curr…

    Date Published:
    2019-06
  • Author(s):
    S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, S. Rouvimov, A. Zhukov
    Abstract:

    The deposition of InxGa1 – xAs with an indium content of 0.3–0.5 and an average thickness of 3– 27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such struc- tures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the…

  • Author(s):
    S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, V. N. Nevedomskiy, L. A. Sokura, S. Rouvimov, M. Shvarts, A. E. Zhukov
    Abstract:

    GaAs photovoltaic converters containing quantum well-dot (QWD) heterostructures are studied. The QWD properties are intermediate between those of quantum wells (QWs) and quantum dots. The QWDs are obtained by the epitaxial deposition of In0.4Ga0.6As with a nominal thickness of 8 single layers by metal-organic vapor phase epitaxy. QWDs are a dense array of elastically strained islands that localize carriers in three directions and are formed by a local increase in the indium concentration and/…

    Date Published:
    2018
  • Author(s):
    S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, S. S. Rouvimov, A. E. Zhukov
    Abstract:

    The deposition of In x Ga1–x As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the p…

    Date Published:
    2017
  • Author(s):
    A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, S. S. Rouvimov, V. N. Nevedomskii, M. V. Maximov, A. E. Zhukov
    Abstract:

    Hybrid quantum-confined heterostructures grown by metal-organic vapor-phase epitaxy (MOVPE) via the deposition of In0.4Ga0.6As layers with various nominal thicknesses onto vicinal GaAs substrates are studied by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence spectra of these structures show the superposition of two spectral lines, which is indicative of the bimodal distribution of the size and/or shape of light-emitting objects in an array. The domin…

    Date Published:
    2018