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  • Author(s):
    D. E. Sviridov, V. N. Jmerik, S. Rouvimov, D. V. Nechaev, V. I. Kozlovsky, S. V. Ivanov

    Spreading resistance microscopy (SRM) was used to study nanoscale variations in electronic and structural properties of an ultrathin near-surface GaN/AlN quantum well (QW). In the SRM images of the growth surface of the GaN/AlN QW heterostructure, an inhomogeneous current contrast was detected in the form of disk-like regions of increased conductivity with the sizes in the range of 50–160 nm and a density of 1.7 109 cm 2 . Analysis of the current contrast dependence on the polarity of the sam…

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