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  Article

  Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters
  

  Author(s):

  S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, V. N. Nevedomskiy, L. A. Sokura, S. Rouvimov, M. Shvarts, A. E. Zhukov

  Abstract:

  GaAs photovoltaic converters containing quantum well-dot (QWD) heterostructures are studied. The QWD properties are intermediate between those of quantum wells (QWs) and quantum dots. The QWDs are obtained by the epitaxial deposition of In0.4Ga0.6As with a nominal thickness of 8 single layers by metal-organic vapor phase epitaxy. QWDs are a dense array of elastically strained islands that localize carriers in three directions and are formed by a local increase in the indium concentration and/…

  Date Published:

  2018

  Record Visibility:

  Public