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  • Author(s):
    Valentin Jmerik, Dmitrii Nechaev, Alexey Toropov, Evgenii Evropeitsev, Vladimir Kozlovsky, Victor Martovitsky, Sergei Rouvimov, Sergei Ivanov

    We report the internal structures and emission properties of GaN/AlN single- and multiple-quantum-well (QW) heterostructures with well widths of d w = 1–4 monolayers (MLs), grown by plasma-assisted molecular-beam epitaxy on c-sapphire at metal-rich conditions and low temperatures (~700 °C). The formation of plane QWs with abrupt symmetrical interfaces is confirmed by both scanning transmission electron microscopy and X-ray diffraction analysis. Pulse-scanning and continuous-wave output powers…

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