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  • Author(s):
    S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, S. Rouvimov, A. Zhukov
    Abstract:

    The deposition of InxGa1 – xAs with an indium content of 0.3–0.5 and an average thickness of 3– 27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such struc- tures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the…

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