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  • Author(s):
    S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, S. S. Rouvimov, A. E. Zhukov
    Abstract:

    The deposition of In x Ga1–x As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the p…

    Date Published:
    2017
  • Author(s):
    A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, S. S. Rouvimov, V. N. Nevedomskii, M. V. Maximov, A. E. Zhukov
    Abstract:

    Hybrid quantum-confined heterostructures grown by metal-organic vapor-phase epitaxy (MOVPE) via the deposition of In0.4Ga0.6As layers with various nominal thicknesses onto vicinal GaAs substrates are studied by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence spectra of these structures show the superposition of two spectral lines, which is indicative of the bimodal distribution of the size and/or shape of light-emitting objects in an array. The domin…

    Date Published:
    2018