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  • Author(s):
    A.A. Toropov, E.A. Evropeytsev, V.N. Jmerik, D.V. Nechaev, S.V. Ivanov, Sergei Rouvimov

    A few monolayer-thick (ML) GaN quantum well (QW) structures are promising for high-power optoelectronic applications in mid-UV wavelength ranges [1-2]. High Resolution Transmission Electron Microscopy (HRTEM) and especially High Angle Annual Dark Field (HAADF) Transmission Electron Microscopy (STEM) appear to be a key metrology to establish a relationship between atomic structure and optical properties of nanostructures. TEM/STEM also provides an effective pathway for optimization of crystal …

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