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  • Author(s):
    Trevor B. Demille, Robert A. Hughes, Nathaniel Dominique, Jacob E. Olson, Sergei Rouvimov, Jon P. Camden, Svetlana Neretina
    Abstract:

    A method for the nanofabrication of periodic arrays of gold nanostars yielding a unique morphology of relevance to SERS applications. With arms radiating from a central core, gold nanostars represent a unique and fascinating class of nanomaterials from which extraordinary plasmonic properties are derived. Despite their relevance to sensing applications, methods for fabricating homogeneous populations of nanostars on large-area planar surfaces in truly periodic arrays is lacking. Herein, the f…

    Date Published:
    2020-07
    Record Visibility:
    Public
  • Author(s):
    Robert Hughes, Sergei Rouvimov, Robert Neal, Trevor B. Demille, Svetlana Neretina
    Abstract:

    The seed-mediated growth of noble metal nanostructures with planar geometries requires the use of seeds lined with parallel stacking faults so as to provide a break in symmetry in an otherwise isotropic metal. Although such seeds are now routinely synthesized using colloidal pathways, equivalent pathways have not yet been reported for the fabrication of substrate-based seeds with the same internal defect structures. The challenge is not merely to form seeds with planar defects but to do so in…

    Date Published:
    2019-07
    Record Visibility:
    Public
  • Author(s):
    Kazuki Nomoto, Aditya Sundar, Kevin Lee, Mingda Zhu, Zongyang Hu, Edward Beam, Jinqiao Xie, Manyam Pilla, Xiang Gao, Sergei Rouvimov, Debdeep Jena, Huili Grace Xing
    Abstract:

    GaN PolarMOS is a vertical power transistor incorporating the unique polarization-induced bulk doping scheme in III-nitrides for the body p-n junction. We report the realization of this device, wherein the vertical channel, source contact, and body contact regions are successfully formed using three steps of selective-area epitaxial regrowth, all by molecular beam epitaxy (MBE). The fabricated PolarMOS has an excellent on-current of >500 mA mm−1 and a specific on-resistance of 0.66 mΩ · cm…

    Date Published:
    2019-05
    Record Visibility:
    Public
  • Author(s):
    Rusen Yan, Guru Khalsa, Brian T. Schaefer, Alexander Janjour, Sergei Rouvimov, Katja Nowack, Huili Xing, Debdeep Jena
    Abstract:

    We report a systematic study of thickness-dependent superconductivity and carrier transport properties in exfoliated layered 2H-NbS2. Hall-effect measurements reveal 2H-NbS2 is a p-type metal with hole mobility of 1–3 cm2 V−1 s−1. The superconducting transition temperature is found to decrease with thickness. However, we find that superconductivity is suppressed due to disorder resulting from the incorporation of atmospheric oxygen. Cross-section transmission electron microscope imaging revea…

    Date Published:
    2019-02
    Record Visibility:
    Public