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• 1

  Article

  Direct modulation characteristics of microdisk lasers with InGaAs / GaAs quantum well-dots
  

  Author(s):

  N Kryzhanovskaya, E. Moiseev, F. I. Zubov, A. M. Mozharov, M. V. Maximov, N. A. Kalyuzhnyy, S. A. Mintariov, Yu Bernikov, S. Rouvimov, A. E. Zhukov

  Abstract:

  GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation curr…

  Date Published:

  2019-05

  Record Visibility:

  Public

• 2

  Article

  Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots
  

  Author(s):

  E. I. Moiseev, F. I. Zubov, A. M. Mozharov, M. V. Maximov, N. A. Kalyuzhnyy, S. A. Mitairov, M. M. Kulagina, S. A. Blokhin, K. E. Kudyavtsev, A. N. Yablonskiy, S. V. Morozov, Y. Bernikov, S. Rouvimov, A. E. Khukov, N. V. Kryzhanovskaya

  Abstract:

  GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation curr…

  Date Published:

  2019-06

  Record Visibility:

  Public

• 3

  Article

  Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD
  

  Author(s):

  S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, S. Rouvimov, A. Zhukov

  Abstract:

  The deposition of InxGa1 – xAs with an indium content of 0.3–0.5 and an average thickness of 3– 27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such struc- tures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the…

  Date Created:

  2018-12-07

  Record Visibility:

  Public

• 4

  Article

  Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters
  

  Author(s):

  S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, V. N. Nevedomskiy, L. A. Sokura, S. Rouvimov, M. Shvarts, A. E. Zhukov

  Abstract:

  GaAs photovoltaic converters containing quantum well-dot (QWD) heterostructures are studied. The QWD properties are intermediate between those of quantum wells (QWs) and quantum dots. The QWDs are obtained by the epitaxial deposition of In0.4Ga0.6As with a nominal thickness of 8 single layers by metal-organic vapor phase epitaxy. QWDs are a dense array of elastically strained islands that localize carriers in three directions and are formed by a local increase in the indium concentration and/…

  Date Published:

  2018

  Record Visibility:

  Public