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  • Author(s):
    S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, S. Rouvimov, A. Zhukov

    The deposition of InxGa1 – xAs with an indium content of 0.3–0.5 and an average thickness of 3– 27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such struc- tures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the…

  • Author(s):
    S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, V. N. Nevedomskiy, L. A. Sokura, S. Rouvimov, M. Shvarts, A. E. Zhukov

    GaAs photovoltaic converters containing quantum well-dot (QWD) heterostructures are studied. The QWD properties are intermediate between those of quantum wells (QWs) and quantum dots. The QWDs are obtained by the epitaxial deposition of In0.4Ga0.6As with a nominal thickness of 8 single layers by metal-organic vapor phase epitaxy. QWDs are a dense array of elastically strained islands that localize carriers in three directions and are formed by a local increase in the indium concentration and/…

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  • Author(s):
    Charles Wampler, Andrew Sommese, Jonathan Hauenstein

    Though numerical methods to find all the isolated solutions of nonlinear systems of multivariate polynomials go back 30 years, it is only over the last decade that numerical methods have been devised for the computation and manipulation of algebraic sets coming from polynomial systems over the complex numbers. Collectively, these algorithms and the underlying theory have come to be known as numerical algebraic geometry. Several software packages are capable of carrying out some of the operati…