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  • Author(s):
    Christopher Smyth, Lee Walsh, Pavel Bolshakov, Massimo Catalano, Michael Schmidt, Brendan Sheehan, Rafik Addou, Luhua Wang, Jiyoung Kim, Moon Kim, Christopher Hinkle, Robert Wallace
    Abstract:

    Sc has been employed as an electron contact to a number of two-dimensional (2D) materials (e.g. MoS2, black phosphorous) and has enabled, at times, the lowest electron contact resistance. However, the extremely reactive nature of Sc leads to stringent processing requirements and metastable device performance with no true understanding of how to achieve consistent, high-performance Sc contacts. In this work, WSe2 transistors with impressive subthreshold slope (109 mV dec−1) and I ON/I OFF (106…

    Date Published:
    2019-07
  • Author(s):
    Christopher Smyth, Lee Walsh, Pavel Bolshakov, Massimo Catalano, Michael Schmidt, Brendan Sheehan, Rafik Addou, Luhua Wang, Jiyoung Kim, Moon Kim, Christopher Hinkle, Robert Wallace
    Abstract:

    Sc has been employed as an electron contact to a number of two-dimensional (2D) materials (e.g. MoS2, black phosphorous) and has enabled, at times, the lowest electron contact resistance. However, the extremely reactive nature of Sc leads to stringent processing requirements and metastable device performance with no true understanding of how to achieve consistent, high-performance Sc contacts. In this work, WSe2 transistors with impressive subthreshold slope (109 mV dec−1) and I ON/I OFF (106…

    Date Published:
    2019-07