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  • Author(s):
    Meng Qi, William O'Brien, Chad Stephenson, Victor Patel, Ning Cao, Brian Thibeault, Marco Schowalter, Andreas Rosenauer, Vladimir Protasenko, Huili Xing, Mark Wistey
    Abstract:

    Tensile-strained Ge is a possible laser material for Si integrated circuits, but reports of lasers using tensile Ge show high threshold current densities and short lifetimes. To study the origins of these shortcomings, Ge ridge waveguides with tensile strain in three dimensions were fabricated using compressive silicon nitride (SiNx) films with up to 2 GPa stress as stress liners. A Raman peak shift of up to 11 cm(-1) was observed, corresponding to 3.6% hydrostatic tensile strain for waveguid…

    Date Published:
    2017-05
    Record Visibility:
    Public