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  • Author(s):
    Paolo Paletti, Ruoyu Yue, Christopher Hinkle, Susan Fullerton-Shirey, Alan Seabaugh
    Abstract:

    Two-dimensional van der Waals materials offer unique advantages for the development of band-to-band tunneling devices given their lack of dangling bonds, atomically flat thickness and steep band edges. Here, we present the experimental demonstration of an electric double layer (EDL) Esaki junction in synthetic WSe2 thin films. A Si-compatible process is developed for the fabrication of nanoscale FETs utilizing molecular beam epitaxy of WSe2 performed directly on top of a high-κ dielectric at ba…

    Date Published:
    2019-04
    Record Visibility:
    Public