Notre Dame Patents

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Description

This collection brings together all of the patents assigned to the University of Notre Dame from 1952 to the present, plus other selected patents prior to 1952. Each record includes a full-text searchable and accessible PDF document for the corresponding invention. The record also includes the present-day academic department with which the inventor was or would have been associated.

Why patents? According to the University’s IDEA Center, “Part of the University’s public service mission is to ensure that the results of its research are made available for public use and benefit. This is accomplished in many ways: through educating students, publishing results of research, and ensuring that inventions are developed into useful products and services for the benefit of the public.”

“Today, our research universities play an even more vital role in creating a better future—not only by educating close to 600,000 graduate students in science and engineering every year, but also, and critically, by performing more than 15% of U.S. R&D in 2011—and according to 2012 NSF data, accounted for the majority (53%) of national basic research. This research, some basic, some applied or ‘translational’ creates new technologies, new products and services, medicines, diagnostics — the list is long and impressive — but also, this research gives rise to entire new industries.” (David Winwood, “The Importance of Patents and Academic Technology Transfer,” March 26, 2015)

The collection also includes the most famous patent associated with Notre Dame, U.S. patent 1,811,959 from 1931, “Vinyl derivatives of acetylene and method of preparing the same” — in other words, synthetic rubber. Invented by Rev. Fr. Julius Nieuwland, CSC, and assigned to DuPont, this patent did, in fact, give rise to entire new industries. More about this invention may be found at the National Inventors Hall of Fame.

These patents are one more example of the University fulfilling Rev. Fr. Sorin’s vision of becoming a “powerful force for good.”

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  • Inventor(s):
    John Simon, Debdeep Jena, Huili (Grace) Xing
    Patent Number:
    US 8835998 B2
    Description:

    A compositionally graded semiconductor device and a method of making same are disclosed that provides an efficient p-type doping for wide bandgap semiconductors by exploiting electronic polarization within the crystalline lattice. The compositional graded semiconductor graded device includes a graded heterojunction interface that exhibits a 3D bound polarization-induced sheet charge that spreads in accordance with .rho..sub..pi.(z)=-.gradient.P(z), where .rho..sub..pi.(z) is a volume charge d…

    Date Issued:
    2014-09-16
    Resource Type
    Patent
  • Inventor(s):
    Berardi Sensale-Rodriguez, Huili (Grace) Xing, Rusen Yan, Michelle M. Kelly, Tian Fang, Debdeep Jena, Lei Liu
    Patent Number:
    US 8836446 B2
    Description:

    A wave amplitude modulator for modulating a transmitted electromagnetic wave includes one or multiple self-gated capacitively coupled pair(s) of electron layers such as semiconductor or semimetal layers. Two electrical contacts are placed to each layer of electrons of the self-gated pair(s), and a power source is electrically connected to them. The power source, by varying the voltage applied between layers of electrons, tunes the electron density thereof, thereby adjusting the optical conduc…

    Date Issued:
    2014-09-16
    Resource Type
    Patent
  • Inventor(s):
    Alan C. Seabaugh, Patrick Fay, Huili (Grace) Xing, Guangle Zhou, Yeqing Lu, Mark A. Wistey, Siyuranga Koswatta
    Patent Number:
    US 8796733 B2
    Description:

    A low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region includes a source-tunneling-region of the source-layer and a drain-tunneling-region of the drain-layer. When no external electric field is imposed, the depletion region of the p-n tunnel junction has an internal electric field…

    Date Issued:
    2014-08-05
    Resource Type
    Patent
  • Inventor(s):
    Huili (Grace) Xing, Debdeep Jena, Kazuki Nomoto, Bo Song, Mingda Zhu, Zongyang Hu
    Patent Number:
    US 9362389 B2
    Description:

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

    Date Issued:
    2016-06-07
    Resource Type
    Patent