Notre Dame Patents

Collection Details Full Record

Description

This collection brings together all of the patents assigned to the University of Notre Dame from 1952 to the present, plus other selected patents prior to 1952. Each record includes a full-text searchable and accessible PDF document for the corresponding invention. The record also includes the present-day academic department with which the inventor was or would have been associated.

Why patents? According to the University’s IDEA Center, “Part of the University’s public service mission is to ensure that the results of its research are made available for public use and benefit. This is accomplished in many ways: through educating students, publishing results of research, and ensuring that inventions are developed into useful products and services for the benefit of the public.”

“Today, our research universities play an even more vital role in creating a better future—not only by educating close to 600,000 graduate students in science and engineering every year, but also, and critically, by performing more than 15% of U.S. R&D in 2011—and according to 2012 NSF data, accounted for the majority (53%) of national basic research. This research, some basic, some applied or ‘translational’ creates new technologies, new products and services, medicines, diagnostics — the list is long and impressive — but also, this research gives rise to entire new industries.” (David Winwood, “The Importance of Patents and Academic Technology Transfer,” March 26, 2015)

The collection also includes the most famous patent associated with Notre Dame, U.S. patent 1,811,959 from 1931, “Vinyl derivatives of acetylene and method of preparing the same” — in other words, synthetic rubber. Invented by Rev. Fr. Julius Nieuwland, CSC, and assigned to DuPont, this patent did, in fact, give rise to entire new industries. More about this invention may be found at the National Inventors Hall of Fame.

These patents are one more example of the University fulfilling Rev. Fr. Sorin’s vision of becoming a “powerful force for good.”

Search CurateND

Search criteria:

Collection: Notre Dame Patents remove ×
Clear all

List of files deposited in CurateND that match your search criteria

  • Inventor(s):
    Gary H. Bernstein, Patrick Fay, Wolfgang Porod, Qing Liu
    Patent Number:
    US 7612443 B2
    Description:

    The present invention provides a quilt packaging system for microchip, a method for making such a quilt packaging system, microchips that may be used in a such a quilt packaging system, and methods for making such microchips.

    Date Issued:
    2009-11-03
    Resource Type
    Patent
  • Inventor(s):
    Patrick Fay, Ning Su
    Patent Number:
    US 8592859 B2
    Description:

    Example methods and apparatus for Antimonide-based backward diode millimeter-wave detectors are disclosed. A disclosed example backward diode includes a cathode layer adjacent to a first side of a non-uniform doping profile, and an Antimonide tunnel barrier layer adjacent to a second side of the spacer layer.

    Date Issued:
    2013-11-26
    Resource Type
    Patent
  • Inventor(s):
    Gary H. Bernstein, Patrick Fay, Wolfgang Porod, Qing Liu
    Patent Number:
    US 8021965 B2
    Description:

    The present invention provides a quilt packaging system for microchip, a method for making such a quilt packaging system, microchips that may be used in a such a quilt packaging system, and methods for making such microchips.

    Date Issued:
    2011-09-20
    Resource Type
    Patent
  • Inventor(s):
    Gary H. Bernstein, Patrick Fay, Wolfgang Porod, Qing Liu
    Patent Number:
    US 7608919 B2
    Description:

    The present invention provides a quilt packaging system for microchip, a method for making such a quilt packaging system, microchips that may be used in a such a quilt packaging system, and methods for making such microchips.

    Date Issued:
    2009-10-27
    Resource Type
    Patent
  • Inventor(s):
    Gary H. Bernstein, Patrick Fay, Wolfgang Porod, Qing Liu
    Patent Number:
    US 8623700 B2
    Description:

    The present invention provides a quilt packaging system for microchip, a method for making such a quilt packaging system, microchips that may be used in a such a quilt packaging system, and methods for making such microchips.

    Date Issued:
    2014-01-07
    Resource Type
    Patent
  • Inventor(s):
    Alan C. Seabaugh, Patrick Fay, Huili (Grace) Xing, Guangle Zhou, Yeqing Lu, Mark A. Wistey, Siyuranga Koswatta
    Patent Number:
    US 8796733 B2
    Description:

    A low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region includes a source-tunneling-region of the source-layer and a drain-tunneling-region of the drain-layer. When no external electric field is imposed, the depletion region of the p-n tunnel junction has an internal electric field…

    Date Issued:
    2014-08-05
    Resource Type
    Patent
  • Inventor(s):
    Gary H. Bernstein, Patrick Fay, Wolfgang Porod, Qing Liu
    Patent Number:
    US 9633976 B1
    Description:

    A quilt packaging system includes a first and second electronic device each comprising a plurality of edge surfaces at least a first edge surface of which comprises one or more interconnect modules disposed thereon. The first edge surface of the second electronic device is positioned contiguous to the first edge surface of the first electronic device, and at least one of the one or more interconnect nodules disposed on the first edge surface of the first electronic device is configured to be …

    Date Issued:
    2017-04-25
    Resource Type
    Patent
  • Inventor(s):
    Patrick Fay, Wenjun Li, Debdeep Jena
    Patent Number:
    US 9905647 B2
    Description:

    A tunnel field-effect transistor device includes a p-type GaN source layer, an n-type GaN drain layer, and an interlayer interfaced between the source-layer and the drain layer. In one example, the interlayer includes an Indium Nitride (InN) layer. In one example, the interlayer includes a graded Indium gallium nitride layer and an InN layer. In one example, the interlayer may include a graded Indium gallium nitride (In.sub.xGa.sub.1-xN) layer and an Indium gallium nitride (InGaN) layer. In o…

    Date Issued:
    2018-02-27
    Resource Type
    Patent