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  • Author(s):
    S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, S. Rouvimov, A. Zhukov
    Abstract:

    The deposition of InxGa1 – xAs with an indium content of 0.3–0.5 and an average thickness of 3– 27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such struc- tures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the…

  • Author(s):
    S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, V. N. Nevedomskiy, L. A. Sokura, S. Rouvimov, M. Shvarts, A. E. Zhukov
    Abstract:

    GaAs photovoltaic converters containing quantum well-dot (QWD) heterostructures are studied. The QWD properties are intermediate between those of quantum wells (QWs) and quantum dots. The QWDs are obtained by the epitaxial deposition of In0.4Ga0.6As with a nominal thickness of 8 single layers by metal-organic vapor phase epitaxy. QWDs are a dense array of elastically strained islands that localize carriers in three directions and are formed by a local increase in the indium concentration and/…

    Date Published:
    2018
  • Author(s):
    D. V. Lebedev, N. A. Kalyuzhnyy, S. A. Mintairov, K. G. Belyaev, M. V. Rakhlin, A. A. Toropov, P. Brunkov, A. S. Vlasov, J. Merz, S. Rouvimov, S. Oktyabrsky, M. Yakimov, I. V. Mukhin, A. V. Shelaev, V. A. Bykov, A. Yu. Romanova, P. A. Buryak, A. M. Mintairov
    Abstract:

    We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4…

    Date Published:
    2018
  • Author(s):
    S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, S. S. Rouvimov, A. E. Zhukov
    Abstract:

    The deposition of In x Ga1–x As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the p…

    Date Published:
    2017
  • Author(s):
    A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, S. S. Rouvimov, V. N. Nevedomskii, M. V. Maximov, A. E. Zhukov
    Abstract:

    Hybrid quantum-confined heterostructures grown by metal-organic vapor-phase epitaxy (MOVPE) via the deposition of In0.4Ga0.6As layers with various nominal thicknesses onto vicinal GaAs substrates are studied by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence spectra of these structures show the superposition of two spectral lines, which is indicative of the bimodal distribution of the size and/or shape of light-emitting objects in an array. The domin…

    Date Published:
    2018