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  • Author(s):
    Kazuki Nomoto, Aditya Sundar, Kevin Lee, Mingda Zhu, Zongyang Hu, Edward Beam, Jinqiao Xie, Manyam Pilla, Xiang Gao, Sergei Rouvimiov, Debdeep Jena, Hulli Grace Xing
    Abstract:

    GaN PolarMOS is a vertical power transistor incorporating the unique polarization-induced bulk doping scheme in III-nitrides for the body p-n junction. We report the realization of this device, wherein the vertical channel, source contact, and body contact regions are successfully formed using three steps of selective-area epitaxial regrowth, all by molecular beam epitaxy (MBE). The fabricated PolarMOS has an excellent on-current of >500 mA mm−1 and a specific on-resistance of 0.66 mΩ · cm…

    Date Published:
    2019-06
    Record Visibility:
    Public
  • Author(s):
    Jin Qin, Edward Kinzel, Liang Wang
    Abstract:

    In this article, we demonstrate a specially designed resonant metamaterial with epsilon-near-zero (ENZ) and nanoantenna to enhance the exposure depth in plasmonic direct writing lithography more than 10 times. The ENZ metamaterial composed of a Ag/Si3N4 multilayer thin film, converts the evanescent field generated by the bowtie aperture nanoantenna to propagating waves with low divergence and high collimation. Deep sub-diffraction limited resolution of less than 65 nm (λ/7) with exposure dept…

    Date Published:
    2019-08
    Record Visibility:
    Public