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  • Author(s):
    Kazuki Nomoto, Aditya Sundar, Kevin Lee, Mingda Zhu, Zongyang Hu, Edward Beam, Jinqiao Xie, Manyam Pilla, Xiang Gao, Sergei Rouvimov, Debdeep Jena, Huili Grace Xing
    Abstract:

    GaN PolarMOS is a vertical power transistor incorporating the unique polarization-induced bulk doping scheme in III-nitrides for the body p-n junction. We report the realization of this device, wherein the vertical channel, source contact, and body contact regions are successfully formed using three steps of selective-area epitaxial regrowth, all by molecular beam epitaxy (MBE). The fabricated PolarMOS has an excellent on-current of >500 mA mm−1 and a specific on-resistance of 0.66 mΩ · cm…

    Date Published:
    2019-05
  • Author(s):
    Tor Elmelund, Rebecca Scheidt, Brian Seger, Prashant Kamat
    Abstract:

    MAPbBr3 and MAPbI3 films cast onto glass slides and physically paired together undergo halide exchange to form mixed halide films. The change in halide composition in these two ∼130 nm thick films occurs concurrently with Br− diffusing toward the MAPbI3 film and I− diffusing toward the MAPbBr3 film. The diffusion of these halide species, which is tracked through changes in the absorption, offers a direct measurement of thermally activated halide diffusion in perovskite films. The increase in …

    Date Published:
    2019-06
  • Author(s):
    R. Scheidt, B. Seger, P. Kamat, Tor Elmelund
    Abstract:

    MAPbBr3 and MAPbI3 films cast onto glass slides and physically paired together undergo halide exchange to form mixed halide films. The change in halide composition in these two ∼130 nm thick films occurs concurrently with Br− diffusing toward the MAPbI3 film and I− diffusing toward the MAPbBr3 film. The diffusion of these halide species, which is tracked through changes in the absorption, offers a direct measurement of thermally activated halide diffusion in perovskite films. The increase in …

    Date Published:
    2019-07