Realization of GaN PolarMOS Using Selective-Area Regrowth by MBE and Its Breakdown Mechanisms.

Article

Abstract

GaN PolarMOS is a vertical power transistor incorporating the unique polarization-induced bulk doping scheme in III-nitrides for the body p-n junction. We report the realization of this device, wherein the vertical channel, source contact, and body contact regions are successfully formed using three steps of selective-area epitaxial regrowth, all by molecular beam epitaxy (MBE). The fabricated PolarMOS has an excellent on-current of >500 mA mm−1 and a specific on-resistance of 0.66 mΩ · cm2 . The reverse breakdown mechanisms of the PolarMOS are investigated. First, a pronounced source-drain vertical leakage is identified and attributed to the passivation of the buried p-type body, which is subsequently resolved by the sidewall activation method. With the body leakage eliminated, the breakdown voltage is found to be limited by a highly conductive path along the regrowth sidewall interface using the conductive scanning probe technique, despite the absence of apparent structural defects.

Attributes

Attribute NameValues
Creator
  • Kazuki Nomoto

  • Aditya Sundar

  • Kevin Lee

  • Mingda Zhu

  • Zongyang Hu

  • Edward Beam

  • Jinqiao Xie

  • Manyam Pilla

  • Xiang Gao

  • Sergei Rouvimiov

  • Debdeep Jena

  • Hulli Grace Xing

Journal or Work Title
  • Japanese Journal of Applied Physics

Volume
  • 58

Issue
  • SC

First Page
  • SCCD15

ISSN
  • 0021-4922

Publication Date
  • 2019-06

Subject
  • Magellan SEM

Publisher
  • IOP Publishing

Date Created
  • 2020-04-08

Language
  • English

Departments and Units
Record Visibility Public
Content License
  • All rights reserved

Digital Object Identifier

doi:10.7567/1347-4065/ab0f1b

This DOI is the best way to cite this article.