Monolithically-pumped erbium-doped waveguide amplifiers and lasers

Patent

Description

Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.

Attributes

Attribute NameValues
Title
  • Monolithically-pumped erbium-doped waveguide amplifiers and lasers

Patent Number
  • US 7655489 B2

USPTO Link
Inventor
  • Douglas C. Hall

  • Mingjun Huang

Inventor From Local Institution
  • Douglas C. Hall

Other Application
  • 12/123,257

Prior Publication Date
  • 2008-11-20

Prior Publication Number
  • US 20080285610 A1

Claims
  • 26

Classification (US Patent)
  • 438/31; 257/E21.248; 257/E21.286;

Cooperative Patent Classification codes
  • C03C 13/048 (20130101); C03C 17/23 (20130101); C03C 25/6286 (20130101); H01L 21/02178 (20130101); H01L 21/02233 (20130101); H01L 21/02255 (20130101); H01L 21/02321 (20130101); H01L 21/02351 (20130101); H01L 21/31155 (20130101); H01L 21/31666 (20130101); H01S 3/0632 (20130101); H01S 3/0941 (20130101); H01S 3/17 (20130101); C03C 2217/228 (20130101); C03C 2217/242 (20130101); C03C 2218/32 (20130101); H01S 3/1608 (20130101); H01S 3/175 (20130101); H01S 5/026 (20130101); H01S 5/18308 (20130101); H01S 5/18358 (20130101); H01S 5/2004 (20130101); H01S 5/40 (20130101); H01S 2301/02 (20130101)

International Patent Classification codes
  • H01L 21/00 (20060101); H01L 21/3115 (20060101); H01L 21/316 (20060101)

Language
  • eng

Date Issued
  • 2010-02-02

Publisher
  • United States Patent and Trademark Office

Assignee
  • University of Notre Dame Du Lac

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