US7655489.pdf (2.32 MB)
Monolithically-pumped erbium-doped waveguide amplifiers and lasers
standard
posted on 2016-06-07, 00:00 authored by Douglas C. Hall, Mingjun HuangDisclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.
History
Patent Number
US 7655489 B2Other Application
12/123,257Inventor
Douglas C. Hall Mingjun HuangInventor from Local Institution
Douglas C. HallAssignee
University of Notre Dame Du LacDate Modified
2017-08-01Language
- English
Claims
26Prior Publication Number
US 20080285610 A1Publisher
United States Patent and Trademark OfficeCooperative Patent Classification Codes
C03C 13/048 (20130101); C03C 17/23 (20130101); C03C 25/6286 (20130101); H01L 21/02178 (20130101); H01L 21/02233 (20130101); H01L 21/02255 (20130101); H01L 21/02321 (20130101); H01L 21/02351 (20130101); H01L 21/31155 (20130101); H01L 21/31666 (20130101); H01S 3/0632 (20130101); H01S 3/0941 (20130101); H01S 3/17 (20130101); C03C 2217/228 (20130101); C03C 2217/242 (20130101); C03C 2218/32 (20130101); H01S 3/1608 (20130101); H01S 3/175 (20130101); H01S 5/026 (20130101); H01S 5/18308 (20130101); H01S 5/18358 (20130101); H01S 5/2004 (20130101); H01S 5/40 (20130101); H01S 2301/02 (20130101)Contributor
Douglas C. HallInternational Patent Classification Codes
H01L 21/00 (20060101); H01L 21/3115 (20060101); H01L 21/316 (20060101)US Patent Classification Codes
438/31; 257/E21.248; 257/E21.286;Usage metrics
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