Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots

Article
Generate Citation Usage Details

Abstract

GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5GHz∕mA1∕2 was estimated.

Attributes
Attribute NameValues
Creator

  • E. I. Moiseev

  • F. I. Zubov

  • A. M. Mozharov

  • M. V. Maximov

  • N. A. Kalyuzhnyy

  • S. A. Mitairov

  • M. M. Kulagina

  • S. A. Blokhin

  • K. E. Kudyavtsev

  • A. N. Yablonskiy

  • S. V. Morozov

  • Y. Bernikov

  • S. Rouvimov

  • A. E. Khukov

  • N. V. Kryzhanovskaya

Journal or Work Title

  • Photonics Research

Volume

  • 7

Issue

  • 6

First Page

  • 664

Last Page

  • 668

Number of Pages

  • 4

Publication Date

  • 2019-06

Subject

  • Magellan SEM

  • Titan TEM

Publisher

  • The Optical Society

Date Created

  • 2019-08-19

Language

  • English

Departments and Units
Record Visibility Public
Content License

  • All rights reserved

Digital Object Identifier

doi:10.1264/PRJ.7.000664

This DOI is the best way to cite this article.

Files

This article has no files associated with it. Please access via the DOI.