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Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots

journal contribution
posted on 2019-08-19, 00:00 authored by A E Khukov, A.M. Mozharov, A.N. Yablonskiy, E.I. Moiseev, F.I. Zubov, K.E. Kudyavtsev, M.M. Kulagina, M.V. Maximov, N.A. Kalyuzhnyy, N.V. Kryzhanovskaya, S. Rouvimov, S.A. Blokhin, S.A. Mitairov, S.V. Morozov, Y Bernikov
GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5GHz∕mA1∕2 was estimated.

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Date Modified

2019-09-12

Language

  • English

Publisher

The Optical Society

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