Direct Observation of Spatial Distribution of Carrier Localization Sites in Ultrathin GaN/AIN Quantum Wells by Spreading Resistance Microscopy

Article

Abstract

Spreading resistance microscopy (SRM) was used to study nanoscale variations in electronic and structural properties of an ultrathin near-surface GaN/AlN quantum well (QW). In the SRM images of the growth surface of the GaN/AlN QW heterostructure, an inhomogeneous current contrast was detected in the form of disk-like regions of increased conductivity with the sizes in the range of 50–160 nm and a density of 1.7 109 cm�2 . Analysis of the current contrast dependence on the polarity of the sample dc bias and the growth surface morphology revealed that these regions are the GaN islands of various thicknesses. These islands spread predominantly within the crystal grains rather than along their boundaries and represent electron localization sites in the QW plane. The results demonstrate the applicability of SRM as an express and non-destructive technique to delineate quantitatively in-plane fluctuations in the electronic and structural properties of near-surface GaN/AlN QWs with a high spatial resolution of 10 nm.

Attributes

Attribute NameValues
Creator
  • D. E. Sviridov

  • V. N. Jmerik

  • S. Rouvimov

  • D. V. Nechaev

  • V. I. Kozlovsky

  • S. V. Ivanov

Journal or Work Title
  • Applied Physics Letters

Volume
  • 114

Issue
  • 6

ISSN
  • 00036951

Publication Date
  • 2019-05

Subject
  • Titan TEM

Publisher
  • AIP Publishing

Date Created
  • 2019-08-22

Language
  • English

Departments and Units
Record Visibility and Access Public
Content License
  • All rights reserved

Digital Object Identifier

doi:10.1063/1.5078751

This DOI is the best way to cite this article.