High-Index-Contrast λ = 1.55 μm AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation

Article

Abstract

A deep-etched high-index-contrast ridge waveguide for low bend loss photonic integration is realized through selective lateral oxidation of a λ 1⁄4 1.55 mm AlInGaAs multi-quantum well diode laser heterostructure waveguide core layer sandwiched between InP cladding layers. The process is enabled by first depositing a thin protective layer to fully suppress the thermal dissociation of exposed InP surfaces during the subsequent oxygen-enhanced wet thermal oxidation process. Either %30–100 nm of InGaAs grow through selective epitaxial regrowth via MOCVD or %6 Å of HfO2 grows via atomic layer deposition is found to be effective at preventing dissociation damage. A lateral oxidation depth of %1.0 mm is achieved with a 3 h oxidation at 525 C, yielding a buried oxide high optical confinement waveguide with reduced capacitance and contact resistance, suitable for the integration of high-speed, low-bend loss integrated laser devices.

Attributes

Attribute NameValues
Creator
  • Jinyang Li

  • Jeremy D. Kirch

  • Chris Signler

  • Luke Mawst

  • Emanuele Pelucci

  • Frank H. Peters

  • Douglas Hall

Journal or Work Title
  • Physica Status Solids

Volume
  • 216

Issue
  • 1

First Page
  • 1

Last Page
  • 8

Number of Pages
  • 7

ISSN
  • 18626319

Publication Date
  • 2019-02

Subject
  • Magellan SEM

Publisher
  • Wiley-VCH

Date Created
  • 2019-09-16

Language
  • English

Departments and Units
Record Visibility and Access Public
Content License
  • All rights reserved

Digital Object Identifier

doi:10.1002/pssa.201800495

This DOI is the best way to cite this article.