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High-Index-Contrast λ = 1.55 μm AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation
journal contribution
posted on 2019-09-16, 00:00 authored by Chris Signler, Douglas Hall, Emanuele Pelucci, Frank H. Peters, Jeremy D. Kirch, Jinyang Li, Luke MawstA deep-etched high-index-contrast ridge waveguide for low bend loss photonic integration is realized through selective lateral oxidation of a λ 1⁄4 1.55 mm AlInGaAs multi-quantum well diode laser heterostructure waveguide core layer sandwiched between InP cladding layers. The process is enabled by first depositing a thin protective layer to fully suppress the thermal dissociation of exposed InP surfaces during the subsequent oxygen-enhanced wet thermal oxidation process. Either 0–100 nm of InGaAs grow through selective epitaxial regrowth via MOCVD or %6 Å of HfO2 grows via atomic layer deposition is found to be effective at preventing dissociation damage. A lateral oxidation depth of %1.0 mm is achieved with a 3 h oxidation at 525 C, yielding a buried oxide high optical confinement waveguide with reduced capacitance and contact resistance, suitable for the integration of high-speed, low-bend loss integrated laser devices.
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2019-09-16Language
- English
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18626319Publisher
Wiley-VCHUsage metrics
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