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Direct modulation characteristics of microdisk lasers with InGaAs / GaAs quantum well-dots

journal contribution
posted on 2020-04-13, 00:00 authored by Alexey Zhukov, A.M. Mozharov, E. Moiseev, F.I. Zubov, M.V. Maximov, N Kryzhanovskaya, N.A. Kalyuzhnyy, S. Rouvimov, S.A. Mintariov, Yu Bernikov
GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5GHz∕mA1∕2 was estimated.

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Date Modified

2020-04-13

Language

  • English

Publisher

Chinese Laser Press

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