APA

Guo, J. (2012). Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts [University of Notre Dame]. https://curate.nd.edu/show/9p29086349d

MLA

Guo, Jia. “Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts.” 21 Dec. 2012. <https://curate.nd.edu/show/9p29086349d>

Chicago

Guo, Jia. 2012. “Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts.” University of Notre Dame. https://curate.nd.edu/show/9p29086349d.

Harvard

Guo, J. (2012) Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts. University of Notre Dame. Available at: https://curate.nd.edu/show/9p29086349d.

BibTex

@phdthesis{guo_2012, title={Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts}, url={https://curate.nd.edu/show/9p29086349d}, school={University of Notre Dame}, author={Guo, Jia}, year={2012}, month={Dec} }