APA

Simon, J. D. (2010). Polarization-Engineered III-V Nitride Heterostructure Devices by Molecular Beam Epitaxy [University of Notre Dame]. https://curate.nd.edu/show/cn69m328p8x

MLA

Simon, John David. “Polarization-Engineered III-V Nitride Heterostructure Devices by Molecular Beam Epitaxy.” 2 Nov. 2010. <https://curate.nd.edu/show/cn69m328p8x>

Chicago

Simon, John David. 2010. “Polarization-Engineered III-V Nitride Heterostructure Devices by Molecular Beam Epitaxy.” University of Notre Dame. https://curate.nd.edu/show/cn69m328p8x.

Harvard

Simon, J. D. (2010) Polarization-Engineered III-V Nitride Heterostructure Devices by Molecular Beam Epitaxy. University of Notre Dame. Available at: https://curate.nd.edu/show/cn69m328p8x.

BibTex

@phdthesis{simon_2010, title={Polarization-Engineered III-V Nitride Heterostructure Devices by Molecular Beam Epitaxy}, url={https://curate.nd.edu/show/cn69m328p8x}, school={University of Notre Dame}, author={Simon, John David}, year={2010}, month={Nov} }