APA

Smyth, C., Walsh, L., Bolshakov, P., Catalano, M., Schmidt, M., Sheehan, B., Addou, R., Wang, L., Kim, J., Kim, M., Hinkle, C., & Wallace, R. (2019). Engineering the interface chemistry for scandium electron contacts in WSE2 transistors and diodes. IOP Science. https://doi.org/10.1088/2053-1583/ab2c44

MLA

Smyth, Christopher et al. “Engineering the interface chemistry for scandium electron contacts in WSE2 transistors and diodes.” 11 Oct. 2019. <https://curate.nd.edu/show/n296ww75m64>

Chicago

Smyth, Christopher, Lee Walsh, Pavel Bolshakov, Massimo Catalano, Michael Schmidt, Brendan Sheehan, Rafik Addou, et al. 2019. “Engineering the Interface Chemistry for Scandium Electron Contacts in WSE2 Transistors and Diodes.” IOP Science. doi:10.1088/2053-1583/ab2c44.

Harvard

Smyth, C. et al. (2019) “Engineering the interface chemistry for scandium electron contacts in WSE2 transistors and diodes.” IOP Science. doi: 10.1088/2053-1583/ab2c44.

BibTex

@article{smyth_walsh_bolshakov_catalano_schmidt_sheehan_addou_wang_kim_kim_et al._2019, title={Engineering the interface chemistry for scandium electron contacts in WSE2 transistors and diodes}, url={https://curate.nd.edu/show/n296ww75m64}, DOI={10.1088/2053-1583/ab2c44}, publisher={IOP Science}, author={Smyth, Christopher and Walsh, Lee and Bolshakov, Pavel and Catalano, Massimo and Schmidt, Michael and Sheehan, Brendan and Addou, Rafik and Wang, Luhua and Kim, Jiyoung and Kim, Moon and et al.}, year={2019}, month={Oct} }