Optical Study of Hot-Electron Transport in Iii-V Nitride Semiconductors, and Molecular Beam Epitaxy of Indium Nitride

Master's Thesis


By studying the photoluminescence from an n-GaN ungated MESFET, the hot carrier temperatures for lattice temperatures in the range 10-300K as a function of the applied electric field are extracted. A semi-analytical theoretical model (Energy Loss Rate model) is used to study the electron temperature as a function of the electric fields. The rate of increase of electron temperature with the external electric field provides a signature of non-equilibrium hot-phonon accumulation. When the chief electron energy loss mechanism is by the emission of LO optical phonons, a clear signature of a hot-phonon effect is observed, with a hot-phonon lifetime in the 3-4 ps regime.

The growth of InN by MBE and its structure, electronic and optical characterizations are presented. The growth condition of InN on GaN substrates using radio frequency molecular beam epitaxy (rf-MBE) is studied. Characterizations such as AFM, XRD, PL and TEM show that InN of good film quality has been achieved.


Attribute NameValues
  • etd-12132005-152349

Author Kejia Wang
Advisor Debdeep Jena
Contributor Douglas Hall, Committee Member
Contributor Debdeep Jena, Committee Chair
Contributor James Merz, Committee Member
Degree Level Master's Thesis
Degree Discipline Electrical Engineering
Degree Name MSEE
Defense Date
  • 2005-11-22

Submission Date 2005-12-13
  • United States of America

  • InN

  • hot phonon

  • GaN

  • hot carrier

  • MBE

  • University of Notre Dame

  • English

Record Visibility Public
Content License
  • All rights reserved

Departments and Units


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