9,362,389 OCR.pdf (1.57 MB)
Polarization induced doped transistor
standard
posted on 2017-08-01, 00:00 authored by Bo Song, Debdeep Jena, Huili (Grace) Xing, Kazuki Nomoto, Mingda Zhu, Zongyang HuA nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.
History
Patent Number
US 9362389 B2Other Application
14/470,569Inventor
Huili (Grace) Xing Debdeep Jena Kazuki Nomoto Bo Song Mingda Zhu Zongyang HuInventor from Local Institution
Huili (Grace) Xing Debdeep Jena Kazuki Nomoto Bo Song Mingda Zhu Zongyang HuAssignee
University of Notre Dame du LacDate Modified
2017-08-01Language
- English
Claims
21Prior Publication Number
US 20150060876 A1Publisher
U.S. Patent and Trademark OfficeCooperative Patent Classification Codes
H01L 29/7787 (20130101); H01L 29/2003 (20130101); H01L 29/201 (20130101); H01L 29/205 (20130101); H01L 29/0619 (20130101); H01L 29/1095 (20130101); H01L 29/8083 (20130101); H01L 21/26546 (20130101); H01L 29/7786 (20130101); H01L 29/7788 (20130101); H01L 21/7813 (20130101); H01L 21/3245 (20130101); H01L 29/41758 (20130101); H01L 29/517 (20130101); H01L 29/0843 (20130101)Contributor
Huili (Grace) Xing|Debdeep Jena|Kazuki Nomoto|Bo Song|Mingda Zhu|Zongyang HuInternational Patent Classification Codes
H01L 29/778 (20060101); H01L 29/10 (20060101); H01L 29/06 (20060101); H01L 29/205 (20060101); H01L 29/201 (20060101); H01L 29/20 (20060101); H01L 29/808 (20060101)Usage metrics
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