Devices for utilizing symFETs for low-power information processing

Patent

Description

A Boolean gate includes at least one symmetric tunneling field-effect transistor (SymFET) for low-power information processing. SymFETs are ideal for applications that demand low power and have moderate speed requirements, and demonstrate better dynamic energy efficiency than CMOS circuits. Negative differential resistance (NDR) behavior of SymFETs leads to hysteresis in inverters and buffers, and can be used to build simple Schmitt-triggers. Further, pseudo-SymFET loads may be utilized in circuits similar to all-n-type or dynamic logic. For example, latches and flip-flops as well as NAND, NOR, IMPLY, and MAJORITY gates may employ SymFETs. Such SymFET-based devices require fewer transistors than static CMOS-based designs.

Attributes

Attribute NameValues
Title
  • Devices for utilizing symFETs for low-power information processing

Patent Number
  • US 9362919 B1

USPTO Link
Inventor
  • Behnam Sedighi

  • Michael Niemier

  • Xiaobo Sharon Hu

  • Joseph J. Nahas

Inventor From Local Institution
  • Behnam Sedighi

  • Michael Niemier

  • Xiaobo Sharon Hu

  • Joseph J. Nahas

Other Application
  • 14/579,763

Claims
  • 13

Cooperative Patent Classification codes
  • H03K 19/195 (20130101); H01L 29/1606 (20130101); H01L 29/778 (20130101); H01L 29/66977 (20130101); H01L 29/0895 (20130101)

International Patent Classification codes
  • H03K 19/195 (20060101); H01L 29/778 (20060101); H01L 29/16 (20060101); H01L 29/08 (20060101); H01L 29/06 (20060101)

Language
  • English

Date Issued
  • 2016-06-07

Publisher
  • U.S. Patent and Trademark Office

Assignee
  • University of Notre Dame du Lac

Record Visibility Public
Content License
  • All rights reserved

Departments and Units
Member of

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