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Devices for utilizing symFETs for low-power information processing

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posted on 2017-08-01, 00:00 authored by Behnam Sedighi, Joseph J. Nahas, Michael Niemier, Sharon Hu Xiaobo
A Boolean gate includes at least one symmetric tunneling field-effect transistor (SymFET) for low-power information processing. SymFETs are ideal for applications that demand low power and have moderate speed requirements, and demonstrate better dynamic energy efficiency than CMOS circuits. Negative differential resistance (NDR) behavior of SymFETs leads to hysteresis in inverters and buffers, and can be used to build simple Schmitt-triggers. Further, pseudo-SymFET loads may be utilized in circuits similar to all-n-type or dynamic logic. For example, latches and flip-flops as well as NAND, NOR, IMPLY, and MAJORITY gates may employ SymFETs. Such SymFET-based devices require fewer transistors than static CMOS-based designs.

History

Patent Number

US 9362919 B1

Other Application

14/579,763

Inventor

Behnam Sedighi Michael Niemier Xiaobo Sharon Hu Joseph J. Nahas

Inventor from Local Institution

Behnam Sedighi Michael Niemier Xiaobo Sharon Hu Joseph J. Nahas

Assignee

University of Notre Dame du Lac

Date Modified

2017-08-01

Language

  • English

Claims

13

Publisher

U.S. Patent and Trademark Office

Cooperative Patent Classification Codes

H03K 19/195 (20130101); H01L 29/1606 (20130101); H01L 29/778 (20130101); H01L 29/66977 (20130101); H01L 29/0895 (20130101)

Contributor

Behnam Sedighi|Michael Niemier|Xiaobo Sharon Hu|Joseph J. Nahas

International Patent Classification Codes

H03K 19/195 (20060101); H01L 29/778 (20060101); H01L 29/16 (20060101); H01L 29/08 (20060101); H01L 29/06 (20060101)

Additional Groups

  • Computer Science and Engineering
  • Electrical Engineering

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