9,362,919 OCR.pdf (2.25 MB)
Devices for utilizing symFETs for low-power information processing
standard
posted on 2017-08-01, 00:00 authored by Behnam Sedighi, Joseph J. Nahas, Michael Niemier, Sharon Hu XiaoboA Boolean gate includes at least one symmetric tunneling field-effect transistor (SymFET) for low-power information processing. SymFETs are ideal for applications that demand low power and have moderate speed requirements, and demonstrate better dynamic energy efficiency than CMOS circuits. Negative differential resistance (NDR) behavior of SymFETs leads to hysteresis in inverters and buffers, and can be used to build simple Schmitt-triggers. Further, pseudo-SymFET loads may be utilized in circuits similar to all-n-type or dynamic logic. For example, latches and flip-flops as well as NAND, NOR, IMPLY, and MAJORITY gates may employ SymFETs. Such SymFET-based devices require fewer transistors than static CMOS-based designs.
History
Patent Number
US 9362919 B1Other Application
14/579,763Inventor
Behnam Sedighi Michael Niemier Xiaobo Sharon Hu Joseph J. NahasInventor from Local Institution
Behnam Sedighi Michael Niemier Xiaobo Sharon Hu Joseph J. NahasAssignee
University of Notre Dame du LacDate Modified
2017-08-01Language
- English
Claims
13Publisher
U.S. Patent and Trademark OfficeCooperative Patent Classification Codes
H03K 19/195 (20130101); H01L 29/1606 (20130101); H01L 29/778 (20130101); H01L 29/66977 (20130101); H01L 29/0895 (20130101)Contributor
Behnam Sedighi|Michael Niemier|Xiaobo Sharon Hu|Joseph J. NahasInternational Patent Classification Codes
H03K 19/195 (20060101); H01L 29/778 (20060101); H01L 29/16 (20060101); H01L 29/08 (20060101); H01L 29/06 (20060101)Additional Groups
- Computer Science and Engineering
- Electrical Engineering
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