8,796,733 OCR.pdf (1.31 MB)
Low voltage tunnel field-effect transistor (TFET) and method of making same
standard
posted on 2017-06-22, 00:00 authored by Alan C. Seabaugh, Guangle Zhou, Huili (Grace) Xing, Mark A. Wistey, Patrick Fay, Siyuranga Koswatta, Yeqing LuA low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region includes a source-tunneling-region of the source-layer and a drain-tunneling-region of the drain-layer. When no external electric field is imposed, the depletion region of the p-n tunnel junction has an internal electric field that substantially points towards the source-tunneling-region and the drain-tunneling-region. The gate-dielectric is interfaced directly onto the drain-tunneling-region such that the drain-tunneling-region is between the source-tunneling-region and the gate-dielectric. The gate is interfaced onto the gate-dielectric such that the gate is configured to impose an external electric field which is oriented substantially in parallel to the internal electric field of the depletion region.
History
Patent Number
US 8796733 B2Other Application
13/206,187Inventor
Alan C. Seabaugh Patrick Fay Huili (Grace) Xing Guangle Zhou Yeqing Lu Mark A. Wistey Siyuranga KoswattaInventor from Local Institution
Alan C. Seabaugh Patrick Fay Huili (Grace) Xing Guangle Zhou Yeqing Lu Mark A. WisteyAssignee
University of Notre Dame du Lac International Business Machines Corporation (Armonk, NY)Date Modified
2017-06-22Language
- English
Claims
16Prior Publication Number
US 20120032227 A1Publisher
U.S. Patent and Trademark OfficeCooperative Patent Classification Codes
H01L 29/7391 (20130101)Contributor
Alan C. Seabaugh|Patrick Fay|Huili (Grace) Xing|Guangle Zhou|Yeqing Lu|Mark A. WisteyInternational Patent Classification Codes
H01L 29/66 (20060101)US Patent Classification Codes
257/183Usage metrics
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