High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3

Article

Abstract

We report the internal structures and emission properties of GaN/AlN single- and multiple-quantum-well (QW) heterostructures with well widths of d w = 1–4 monolayers (MLs), grown by plasma-assisted molecular-beam epitaxy on c-sapphire at metal-rich conditions and low temperatures (~700 °C). The formation of plane QWs with abrupt symmetrical interfaces is confirmed by both scanning transmission electron microscopy and X-ray diffraction analysis. Pulse-scanning and continuous-wave output powers of 150 and 28 mW, respectively, at a peak emission wavelength of 235 nm were achieved at 300 K in an electron-beam-pumped deep-ultraviolet (1.5 ML-GaN/5.5 nm-AlN)360 multiple-QW emitter with a maximum efficiency of 0.75%.

Attributes

Attribute NameValues
Creator
  • Valentin Jmerik

  • Dmitrii Nechaev

  • Alexey Toropov

  • Evgenii Evropeitsev

  • Vladimir Kozlovsky

  • Victor Martovitsky

  • Sergei Rouvimov

  • Sergei Ivanov

Journal or Work Title
  • Applied Physics Express

Volume
  • 11

Issue
  • 9

First Page
  • 91003

ISSN
  • 1882-0778

Publication Date
  • 2018

Publisher
  • IOPSCIENCE

Date Created
  • 2018-12-07

Language
  • English

Departments and Units
Record Visibility and Access Public
Content License
  • All rights reserved

Digital Object Identifier

doi:10.7567/APEX.11.091003

This DOI is the best way to cite this article.