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Properties and Characterization of Deeply-Etched High-Index-Contrast Ridge Waveguide Structures

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posted on 2012-04-13, 00:00 authored by Christopher S Seibert
In order to fill the need for more densely packed photonic integrated circuits (PICs) the higher optical confinement provided by high-index-contrast (HIC) ridge waveguide (RWG) structures is required. In order to realize the high index contrast (Δn) between the semiconductor waveguide core and the dielectric cladding, an oxygen-enhanced non-selective wet thermal oxidation (OENSO) process developed at the University of Notre Dame has been applied to the fabrication of GaAs and InP based HIC RWGs. In this work, the unique characteristics of HIC RWGs as well as the interface between the semiconductor and the native oxide have been examined. Utilizing this process, passive single mode HIC RWG devices have been fabricated which exhibit record low propagation losses. Active diode laser devices are fabricated with improved performance over previous results. For the first time these devices have been modified for junction side down bonding to heatsinks and characterized under continuous wave (CW) excitation while mounted to a temperature controlled stage. Finally, the use of the OENSO process has been extended for use in the oxidation of InGaAs lattice matched to InP. As proof of the efficacy of this process for use in this new material system, a novel native-oxide confined quantum cascade laser operating at λ=5.4 μm has been demonstrated.

History

Date Modified

2017-06-02

Defense Date

2012-04-10

Research Director(s)

Douglas C. Hall

Committee Members

Jim Merz Mark Wistey Gregory Snider Patrick Fay

Degree

  • Doctor of Philosophy

Degree Level

  • Doctoral Dissertation

Language

  • English

Alternate Identifier

etd-04132012-113755

Publisher

University of Notre Dame

Program Name

  • Electrical Engineering

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