Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters

Article

Abstract

GaAs photovoltaic converters containing quantum well-dot (QWD) heterostructures are studied. The QWD properties are intermediate between those of quantum wells (QWs) and quantum dots. The QWDs are obtained by the epitaxial deposition of In0.4Ga0.6As with a nominal thickness of 8 single layers by metal-organic vapor phase epitaxy. QWDs are a dense array of elastically strained islands that localize carriers in three directions and are formed by a local increase in the indium concentration and/ or InGaAs-layer thickness. There are two quantum-well levels of varied nature in structures with QWDs. These levels are manifested in the spectral characteristics of GaAs photovoltaic converters. A short-wavelength peak with a maximum at around 935 nm is associated with absorption in the residual QW, and the long-wavelength peak (1015–1030 nm) is due to absorption in the QWDs. Investigation by transmission electron microscopy demonstrates that an increase in the number of InGaAs layers leads to stronger elastic stresses, which, in turn, increases the carrier confinement energy in the QWDs and lead to a corresponding long-wavelength shift of the internal quantum efficiency spectrum.

Attributes

Attribute NameValues
Creator
  • S. A. Mintairov

  • N. A. Kalyuzhnyy

  • A. M. Nadtochiy

  • M. V. Maximov

  • V. N. Nevedomskiy

  • L. A. Sokura

  • S. Rouvimov

  • M. Shvarts

  • A. E. Zhukov

Journal or Work Title
  • Semiconductors

Volume
  • 52

Issue
  • 10

First Page
  • 1249

Last Page
  • 1254

ISSN
  • 1063-7826

Publication Date
  • 2018

Publisher
  • Springer

Date Created
  • 2018-12-07

Language
  • English

Departments and Units
Record Visibility and Access Public
Content License
  • All rights reserved

Digital Object Identifier

doi:10.1134/S1063782618100147

This DOI is the best way to cite this article.