Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

Article

Abstract

The deposition of InxGa1 – xAs with an indium content of 0.3–0.5 and an average thickness of 3– 27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such struc- tures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal aver- age InxGa1 – xAs thicknesses and compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.

Attributes

Attribute NameValues
Creator
  • S. A. Mintairov

  • N. A. Kalyuzhnyy

  • A. M. Nadtochiy

  • M. V. Maximov

  • S. Rouvimov

  • A. Zhukov

Journal or Work Title
  • Semiconductors

Volume
  • 51

Issue
  • 3

First Page
  • 357

Last Page
  • 362

ISSN
  • 1063-7826

Publisher
  • Springer

Date Created
  • 2018-12-07

Language
  • English

Departments and Units
Record Visibility and Access Public
Content License
  • All rights reserved

Digital Object Identifier

doi:10.1134/S1063782617030198

This DOI is the best way to cite this article.