US8592859.pdf (789.7 kB)

Methods and apparatus for antimonide-based backward diode millimeter-wave detectors

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posted on 2016-06-07, 00:00 authored by Ning Su, Patrick Fay

Example methods and apparatus for Antimonide-based backward diode millimeter-wave detectors are disclosed. A disclosed example backward diode includes a cathode layer adjacent to a first side of a non-uniform doping profile, and an Antimonide tunnel barrier layer adjacent to a second side of the spacer layer.

History

Patent Number

US 8592859 B2

Other Application

12/993,974

USPTO Link

http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/8592859

Inventor

Patrick Fay Ning Su

Inventor from Local Institution

Patrick Fay

Assignee

University of Notre Dame Du Lac

Date Modified

2016-06-07

Language

English

Claims

6

Prior Publication Number

US 20110186906 A1

Publisher

United States Patent and Trademark Office

Cooperative Patent Classification Codes

H01L 29/205 (20130101); H01L 29/365 (20130101); H01L 31/109 (20130101); H01L 29/88 (20130101); H01L 29/66219 (20130101)

Contributor

Patrick Fay

International Patent Classification Codes

H01L 29/88 (20060101)

US Patent Classification Codes

257/106; 257/656; 257/E29.332; 257/E29.336;

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Licence

CC BY 4.0

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