Methods and apparatus for antimonide-based backward diode millimeter-wave detectors

Patent

Description

Example methods and apparatus for Antimonide-based backward diode millimeter-wave detectors are disclosed. A disclosed example backward diode includes a cathode layer adjacent to a first side of a non-uniform doping profile, and an Antimonide tunnel barrier layer adjacent to a second side of the spacer layer.

Attributes

Attribute NameValues
Title
  • Methods and apparatus for antimonide-based backward diode millimeter-wave detectors

Patent Number
  • US 8592859 B2

USPTO Link
Inventor
  • Patrick Fay

  • Ning Su

Inventor From Local Institution
  • Patrick Fay

Other Application
  • 12/993,974

Prior Publication Date
  • 2011-08-04

Prior Publication Number
  • US 20110186906 A1

Claims
  • 6

Classification (US Patent)
  • 257/106; 257/656; 257/E29.332; 257/E29.336;

Cooperative Patent Classification codes
  • H01L 29/205 (20130101); H01L 29/365 (20130101); H01L 31/109 (20130101); H01L 29/88 (20130101); H01L 29/66219 (20130101)

International Patent Classification codes
  • H01L 29/88 (20060101)

Language
  • eng

Date Issued
  • 2013-11-26

Publisher
  • United States Patent and Trademark Office

Assignee
  • University of Notre Dame Du Lac

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