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Manufacture and Performance of Aluminum Single Electron Transistor for Ultra-Sensitive Charge Fluctuation Measurements
thesis
posted on 2008-04-23, 00:00 authored by Hubert GeorgeThe necessity for development of new technologies has opened doors to novel devices that potentially would continue the progress in technology. Single Electron Transistors (SETs) show a promising future as an option for computing and other applications in electronics. One of the applications we are interested on, is using them as electrometers, SETs as the most charge sensitive devices, to perform ultra-sensitive charge fluctuation measurements. This work consists on the fabrication and implementation of SETs to measure charge fluctuations made by electrons, and establish the cause of the fluorescence intermittency seen in molecules and quantum dots (QD). The SETs have to meet requirements of high stability and high charging energy, greater than 0.5 meV, for its application in the QD experimental setup.
History
Date Modified
2017-06-02Research Director(s)
Dr. Gregory sniderDegree
- Master of Science in Electrical Engineering
Degree Level
- Master's Thesis
Language
- English
Alternate Identifier
etd-04232008-160502Publisher
University of Notre DameProgram Name
- Electrical Engineering
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