Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

Article

Abstract

The deposition of In x Ga1–x As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In x Ga1–x As thicknesses and compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.

Attributes

Attribute NameValues
Creator
  • S. A. Mintairov

  • N. A. Kalyuzhnyy

  • A. M. Nadtochiy

  • M. V. Maximov

  • S. S. Rouvimov

  • A. E. Zhukov

Publication Date
  • 2017

Date Created
  • 2018-08-23

Language
  • English

Departments and Units
Record Visibility and Access Public
Content License
  • All rights reserved

Digital Object Identifier

doi:10.1134/S1063782617030198

This DOI is the best way to cite this article.