HAADF STEM and PL Characterization of Monolayer-Thick GaN/(Al,Ga)N Quantum Wells for Deep UV Optoelectronics Applications

Article

Abstract

A few monolayer-thick (ML) GaN quantum well (QW) structures are promising for high-power optoelectronic applications in mid-UV wavelength ranges [1-2]. High Resolution Transmission Electron Microscopy (HRTEM) and especially High Angle Annual Dark Field (HAADF) Transmission Electron Microscopy (STEM) appear to be a key metrology to establish a relationship between atomic structure and optical properties of nanostructures. TEM/STEM also provides an effective pathway for optimization of crystal growth of ML thick nanostructures [1]. Here we report TEM analysis of 1-5 ML thick GaN QWs in conjunction with optical research of peculiarities of their electronic band structure.

Attributes

Attribute NameValues
Creator
  • A.A. Toropov

  • E.A. Evropeytsev

  • V.N. Jmerik

  • D.V. Nechaev

  • S.V. Ivanov

  • Sergei Rouvimov

Publication Date
  • 2017

Date Created
  • 2018-08-23

Language
  • English

Departments and Units
Record Visibility and Access Public
Content License
  • All rights reserved

Digital Object Identifier

doi:10.1017/S1431927617008108

This DOI is the best way to cite this article.