Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy

Article

Abstract

We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm–2. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.

Attributes

Attribute NameValues
Creator
  • D. V. Lebedev

  • N. A. Kalyuzhnyy

  • S. A. Mintairov

  • K. G. Belyaev

  • M. V. Rakhlin

  • A. A. Toropov

  • P. Brunkov

  • A. S. Vlasov

  • J. Merz

  • S. Rouvimov

  • S. Oktyabrsky

  • M. Yakimov

  • I. V. Mukhin

  • A. V. Shelaev

  • V. A. Bykov

  • A. Yu. Romanova

  • P. A. Buryak

  • A. M. Mintairov

Publication Date
  • 2018

Date Created
  • 2018-08-23

Language
  • English

Departments and Units
Record Visibility and Access Public
Content License
  • All rights reserved

Digital Object Identifier

doi:10.1134/S1063782618040206

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