9905647OCR.pdf (1.11 MB)
Group III-nitride compound heterojunction tunnel field-effect transistors and methods for making the same
standard
posted on 2018-08-07, 00:00 authored by Debdeep Jena, Patrick Fay, Wenjun LiA tunnel field-effect transistor device includes a p-type GaN source layer, an n-type GaN drain layer, and an interlayer interfaced between the source-layer and the drain layer. In one example, the interlayer includes an Indium Nitride (InN) layer. In one example, the interlayer includes a graded Indium gallium nitride layer and an InN layer. In one example, the interlayer may include a graded Indium gallium nitride (In.sub.xGa.sub.1-xN) layer and an Indium gallium nitride (InGaN) layer. In one example, the tunnel field-effect transistor device includes an in-line configuration. In one example, the tunnel field-effect transistor device includes a side-wall configuration.
History
Patent Number
US 9905647 B2Other Application
14/925,542Inventor
Patrick Fay Wenjun Li Debdeep JenaInventor from Local Institution
Patrick Fay Wenjun Li Debdeep JenaAssignee
University of Notre Dame Du LacDate Modified
2018-08-07Language
- English
Claims
8Prior Publication Number
US 20170125521 A1Publisher
U.S. Patent and Trademark OfficeCooperative Patent Classification Codes
H01L 29/0895 (20130101); H01L 29/78 (20130101); H01L 29/78681 (20130101); H01L 29/78618 (20130101); H01L 29/66977 (20130101); H01L 29/66742 (20130101); H01L 29/78696 (20130101); H01L 29/42392 (20130101); H01L 29/205 (20130101); H01L 29/0669 (20130101); H01L 29/66522 (20130101); H01L 29/42356 (20130101); H01L 29/7391 (20130101); H01L 29/2003 (20130101); H01L 29/083 (20130101); H01L 29/517 (20130101)Contributor
Patrick Fay|Wenjun Li|Debdeep JenaInternational Patent Classification Codes
H01L 29/78 (20060101); H01L 29/20 (20060101); H01L 29/08 (20060101)Usage metrics
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